RT1N137S
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RT1N137S

SKU: RT1N137S
RT1N137S Transistor Silicon Pre-Biased-NPN CASE: TO92S MAKE: Mitsubishi
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case TO92S
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code N137
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 0.045
SKU 1440263
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