RT1N14HM
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RT1N14HM

SKU: RT1N14HM
RT1N14HM Transistor Silicon Pre-Biased-NPN CASE: SC70 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC70
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 24
SMD Transistor Code NJ
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 1440272
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