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RT1N14HS
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RT1N14HS

SKU: RT1N14HS
RT1N14HS Transistor Silicon Pre-Biased-NPN CASE: TO92S MAKE: Mitsubishi
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case TO92S
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.45 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 24
SMD Transistor Code N14H
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 1440273
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