RT1N234S
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RT1N234S

SKU: RT1N234S
RT1N234S Transistor Silicon Pre-Biased-NPN CASE: TO92S MAKE: Mitsubishi
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case TO92S
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.45 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 33
SMD Transistor Code N234
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 1440297
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