RT1N242C
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RT1N242C

SKU: RT1N242C
RT1N242C Transistor Silicon Pre-Biased-NPN CASE: SC59 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC59
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 68
SMD Transistor Code NK
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.47
SKU 1440308
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