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RT1N430C
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RT1N430C

SKU: RT1N430C
RT1N430C Transistor Silicon NPN CASE: SOT23 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code N6
Built in Bias Resistor R1 4.7 kOhm
SKU 552691
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