RT1N430M
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RT1N430M

SKU: RT1N430M
RT1N430M Transistor Silicon NPN CASE: SOT323 MAKE: Mitsubishi
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Product specifications
Type Transistor Silicon NPN
Case SOT323
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code N6
Built in Bias Resistor R1 4.7 kOhm
SKU 552692
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