RT1N432M
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RT1N432M

SKU: RT1N432M
RT1N432M Transistor Silicon Pre-Biased-NPN CASE: SC70 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC70
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code NG
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.47
SKU 1440326
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