RT1N434M
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RT1N434M

SKU: RT1N434M
RT1N434M Transistor Silicon Pre-Biased-NPN CASE: SOT323 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT323
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code N4
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 552694
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