RT1N436M
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RT1N436M

SKU: RT1N436M
RT1N436M Transistor Silicon Pre-Biased-NPN CASE: SC70 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC70
Manufacturer Mitsubishi
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code NH
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 1440331
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