RT1P141M
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RT1P141M

SKU: RT1P141M
RT1P141M SI-PNP-DIGI - Case: SOT323 Make: Mitsubishi
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Product specifications
Type Transistor Silicon NPN
Case SOT323
Manufacturer Mitsubishi
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code P1
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 552701
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