RT1P231S
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RT1P231S

SKU: RT1P231S
RT1P231S Transistor Silicon PNP CASE: TO92S MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO92S
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.45 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code P231
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1440388
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