The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
RT2A00AM1
View detailed images (5)

RT2A00AM1

SKU: RT2A00AM1
RT2A00AM1 Transistor Silicon PNP CASE: SOT353 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT353
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SMD Transistor Code ME_MF
SKU 1440446
Back