RT5230
View detailed images (12)

RT5230

SKU: RT5230
RT5230 Transistor Silicon NPN CASE: TO5 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Raytheon Semiconductor
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 565211
Back