RT5402

SKU: RT5402

RT5402 Transistor Silicon NPN CASE: TO5 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO5
Manufacturer	Raytheon Semiconductor
Vbr CBO	30
Vbr CEO	25
Max. PD (W)	700m
C(ob) (F)	19p
Derate (Amb) (W/°C)	4.0m
hfe	300
Ic Max. (A)	750
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	200
@Ic (A)	10m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.33 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	140 °C
Collector Capacitance (Cc)	4 pF
Forward Current Transfer Ratio (hFE), MIN	100
SKU	565213

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