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RT929H
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RT929H

SKU: RT929H
RT929H Transistor Silicon NPN CASE: X55-1 MAKE: Raytheon
Product specifications
Type Transistor Silicon NPN
Case X55-1
Manufacturer Raytheon
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 70m
C(ob) (F) 8p
hfe 40
Icbo Max. @Vcb Max. (A) .01u
Polarity NPN
Trans. Freq (Hz) Min. 30M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) .01m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 652756
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