The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
RTBN432AP1

RTBN432AP1

SKU: RTBN432AP1
RTBN432AP1 Transistor Silicon Pre-Biased-NPN CASE: SC62 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SC62
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code NH
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.47
SKU 1440628
Back