RTGN131AP
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RTGN131AP

SKU: RTGN131AP
RTGN131AP Transistor Silicon Pre-Biased-NPN CASE: SOT89 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT89
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code NB
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 1 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1440630
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