RTGN14BAP
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RTGN14BAP

SKU: RTGN14BAP
RTGN14BAP Transistor Silicon Pre-Biased-NPN CASE: SOT89 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT89
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code NG
Built in Bias Resistor R2 10 kOhm
SKU 1440632
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