| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO92 |
| Manufacturer |
Toshiba |
| Vbr CBO |
60 |
| Vbr CEO |
60 |
| Max. PD (W) |
625m |
| C(ob) (F) |
3.5p |
| hfe |
700= |
| Ic Max. (A) |
200m |
| @Temp. (test) (°C) |
40 |
| Ir @ Diff. Temp (A) |
300u |
| VRRM |
200 |
| Polarity |
NPN |
| 1-Cycle Surge Current (A) |
50 |
| @Temp (test) (°C) |
150# |
| @Temp. (test) for Vf) |
25# |
| Vf Max. |
1.0 |
| I(out) (If AVG) Max. |
1.5 |
| Trans. Freq (Hz) Min. |
150M |
| @VCE (test) (V) |
5.0 |
| @Volts (test) (V) |
200 |
| @If (test) |
1.0 |
| Oper. Temp (°C) Max. |
170 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.5 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
7 V |
| Maximum Collector Current |Ic max| |
0.2 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
150 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
120 |
| SKU |
584331 |