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S1732
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S1732

SKU: S1732
S1732 Transistor Silicon NPN CASE: SOT128 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT128
Manufacturer Toshiba
Vbr CBO 200
Vbr CEO 120
Max. PD (W) 1.5
Max. hFE 250
Min hFE 60
Ic Max. (A) 800m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 12m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 6.2 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 584333
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