S1806

SKU: S1806

S1806 Transistor Silicon PNP CASE: TO92 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	30
Max. PD (W)	625m
Derate (Amb) (W/°C)	4.0m
hfe	70
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	300M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	140
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.625 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	70
SKU	584335

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