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S2000
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S2000

SKU: S2000
S2000 Transistor Silicon NPN CASE: DIP40 MAKE: Toshiba
Datasheet
S2000 Datasheet
Product specifications
Type Transistor Silicon NPN
Case DIP40
Manufacturer Toshiba
Vbr CBO 300
Vbr CEO 1.5k
Max. PD (W) 12
t(f) Max. (S) 700n
Max. hFE 7.0M
Min hFE 2.2
No. of I/O Lines 13
I/O Line Types Gen. Purp.
Min Inst. Len (bits) 8
Ic Max. (A) 5.0
@Ic (test) (A) 4.5
Icbo Max. @Vcb Max. (A) 1.0m
No. of I/O Ports 2
On-Chip ROM (bytes) 1k
Polarity NPN
Nom. Supp Volt 9.0
Tech. NMOS Integrated Circuit
Derate Above 25°C 145m
On-Chip RAM (Bytes) 256
Oper. Temp (°C) Min 0
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Pinout Equivalence Number 3-15
No. of Pins 40
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Emitter Voltage |Vce| 1500 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 125 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 2.2
SKU 362115
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