The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
S2000A

S2000A

SKU: S2000A
S2000A Transistor Silicon NPN CASE: TO218 MAKE: Toshiba
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 25 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
S2000A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Toshiba
Vbr CBO 300
Vbr CEO 1.5k
Max. PD (W) 12
t(f) Max. (S) 700n
Max. hFE 7.0M
Min hFE 2.2
No. of I/O Lines 13
I/O Line Types Gen. Purp.
Min Inst. Len (bits) 8
Ic Max. (A) 5.0
@Ic (test) (A) 4.5
Icbo Max. @Vcb Max. (A) 1.0m
fClk Max. (Hz) 900k
No. of I/O Ports 2
On-Chip ROM (bytes) 1k
Polarity NPN
Nom. Supp Volt 9.0
Tech. NMOS Integrated Circuit
Derate Above 25°C 145m
On-Chip RAM (Bytes) 256
Oper. Temp (°C) Min 0
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Pinout Equivalence Number 3-15
No. of Pins 40
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Emitter Voltage |Vce| 1500 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 125 pF
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 2.2
SKU 80519
Back