| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO218 |
| Manufacturer |
Toshiba |
| Vbr CBO |
300 |
| Vbr CEO |
1.5k |
| Max. PD (W) |
12 |
| t(f) Max. (S) |
700n |
| Max. hFE |
7.0M |
| Min hFE |
2.2 |
| No. of I/O Lines |
13 |
| I/O Line Types |
Gen. Purp. |
| Min Inst. Len (bits) |
8 |
| Ic Max. (A) |
5.0 |
| @Ic (test) (A) |
4.5 |
| Icbo Max. @Vcb Max. (A) |
1.0m |
| fClk Max. (Hz) |
900k |
| No. of I/O Ports |
2 |
| On-Chip ROM (bytes) |
1k |
| Polarity |
NPN |
| Nom. Supp Volt |
9.0 |
| Tech. |
NMOS Integrated Circuit |
| Derate Above 25°C |
145m |
| On-Chip RAM (Bytes) |
256 |
| Oper. Temp (°C) Min |
0 |
| Oper. Temp (°C) Max. |
125 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-15 |
| No. of Pins |
40 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
125 W |
| Maximum Collector-Emitter Voltage |Vce| |
1500 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
8 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
125 pF |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
2.2 |
| SKU |
80519 |