S2055A

SKU: S2055A

S2055A Transistor Silicon NPN CASE: TO247 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO247
Manufacturer	Toshiba
Vbr CBO	300
Vbr CEO	1.5k
Max. PD (W)	12
t(f) Max. (S)	700n
Max. hFE	7.0M
Min hFE	2.2
Ic Max. (A)	5.0
@Ic (test) (A)	4.5
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	145m
Oper. Temp (°C) Max.	125
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Emitter Voltage \|Vce\|	1500 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	125 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	2.2
SKU	116141

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