S2801

SKU: S2801

S2801 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	1.4k
Max. PD (W)	50
t(f) Max. (S)	1.0u
Min hFE	4.0
Ic Max. (A)	10
@Ic (test) (A)	8.0
Polarity	NPN
Trans. Freq (Hz) Min.	3.0M
@VCE (V)	5.0
Pinout Equivalence Number	3-16
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	1300 V
Maximum Collector-Emitter Voltage \|Vce\|	500 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	250 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	584345

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