The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
S2824
View detailed images (13)

S2824

SKU: S2824
S2824 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CEO 1.5k
Max. PD (W) 10
t(f) Max. (S) 1.0u
Min hFE 8.0
Ic Max. (A) 3.5
@Ic (test) (A) 3.5
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 115m
Trans. Freq (Hz) Min. 7.0M
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Emitter Voltage |Vce| 1500 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 115 °C
Collector Capacitance (Cc) 95 pF
Transition Frequency (ft): 7 MHz
Forward Current Transfer Ratio (hFE), MIN 2
SKU 584346
Back