| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO39 |
| Manufacturer |
Halbleiterwerk Frankfurt Oder |
| Vbr CBO |
30 |
| Vbr CEO |
20 |
| Max. PD (W) |
200m |
| C(ob) (F) |
4.0p |
| hfe |
200 |
| Ic Max. (A) |
200m |
| Icbo Max. @Vcb Max. (A) |
100n- |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
150M |
| @VCE (test) (V) |
4.0 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.6 W |
| Maximum Collector-Base Voltage |Vcb| |
100 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Transition Frequency (ft): |
60 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
28 |
| SKU |
541370 |