SMBT35200MT1G
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SMBT35200MT1G

SKU: SMBT35200MT1G
SMBT35200MT1G Transistor Silicon PNP CASE: SOT457 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT457
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.63 W
Maximum Collector-Base Voltage |Vcb| 55 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 100 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code G4
SKU 1441006
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