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TBC337
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TBC337

SKU: TBC337
TBC337 Transistor Silicon NPN CASE: TO92 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 45
Max. PD (W) 625m
C(ob) (F) 12p
hfe 600=
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 584905
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