The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
TBC338
View detailed images (12)

TBC338

SKU: TBC338
TBC338 Transistor Silicon PNP CASE: TO92 MAKE: Toshiba
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 625m
C(ob) (F) 12p
hfe 600=
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 584906
Back