TBF869

SKU: TBF869

TBF869 Transistor Silicon NPN CASE: SOT128 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT128
Manufacturer	Toshiba
Vbr CBO	250
Vbr CEO	250
Max. PD (W)	1.6
Min hFE	50
Ic Max. (A)	50m
@Ic (test) (A)	25m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Derate Above 25°C	12m
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	150
@VCE (V)	20
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1.6 W
Maximum Collector-Base Voltage \|Vcb\|	250 V
Maximum Collector-Emitter Voltage \|Vce\|	250 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	2 pF
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	584917

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