TEC8013F

SKU: TEC8013F

TEC8013F Transistor Silicon NPN CASE: TO92 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	TEC8013
Type	Transistor Silicon NPN
Case	TO92
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	30
Max. PD (W)	625m
C(ob) (F)	7.0p
Derate (Amb) (W/°C)	5.0m
hfe	96
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	300M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.625 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	140 MHz
Forward Current Transfer Ratio (hFE), MIN	96
SKU	1280890

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