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TEC8013G
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TEC8013G

SKU: TEC8013G
TEC8013G Transistor Silicon NPN CASE: TO92 MAKE: Toshiba
Product specifications
Equivalent TEC8013
Type Transistor Silicon NPN
Case TO92
Manufacturer Toshiba
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 625m
C(ob) (F) 7.0p
Derate (Amb) (W/°C) 5.0m
hfe 118
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 300M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.625 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 118
SKU 1280896
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