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TEC9011I
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TEC9011I

SKU: TEC9011I
TEC9011I Transistor Silicon NPN CASE: TO92 MAKE: Toshiba
Product specifications
Equivalent TEC9011
Type Transistor Silicon NPN
Case TO92
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 30
Max. PD (W) 400m
Derate (Amb) (W/°C) 3.2m
hfe 132
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1.5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 132
SKU 586282
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