TEC9012

SKU: TEC9012

TEC9012 Transistor Silicon PNP CASE: TO92 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	TEC9012J
Type	Transistor Silicon PNP
Case	TO92
Manufacturer	Toshiba
Vbr CBO	30
Vbr CEO	25
Max. PD (W)	625m
C(ob) (F)	7.0p
Derate (Amb) (W/°C)	5.0m
hfe	214
Ic Max. (A)	800m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	150
@Ic (A)	50m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.625 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.8 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	96
SKU	585678

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