| Type | Transistor Germanium | |
| Case | TO1 | |
| Manufacturer | Siemens Semiconductors | |
| Vbr CBO | 16 | |
| Vbr CEO | 12 | |
| Max. PD (W) | 25m | |
| C(ob) (F) | 25p | |
| Derate (Amb) (W/°C) | 2.0m | |
| hfe | 45 | |
| Ic Max. (A) | 15m | |
| Icbo Max. @Vcb Max. (A) | 5.0u | |
| Trans. Freq (Hz) Min. | 700k | |
| @VCE (test) (V) | 2.0i | |
| Oper. Temp (°C) Max. | 75 | |
| @Ic (A) | 2.0m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| SKU | 450229 | |