TIP31F

SKU: TIP31F

TIP31F Transistor Silicon NPN CASE: TO220 MAKE: NTE Electronics

Datasheet

TIP31F Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	NTE Electronics
Vbr CBO	200
Vbr CEO	160
Max. PD (W)	2.0
t(f) Max. (S)	300n-
Min hFE	25
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	300u
Polarity	NPN
Tr Max. (s)	500n-
Derate Above 25°C	16m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	160 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	364528

Back