TIP32E

SKU: TIP32E

TIP32E Transistor Silicon PNP CASE: TO220 MAKE: NTE Electronics

Datasheet

TIP32E Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	NTE Electronics
Vbr CBO	180
Vbr CEO	140
Max. PD (W)	40
Derate (Amb) (W/°C)	320m
t(f) Max. (S)	300n-
Min hFE	25
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	0.3m
Polarity	PNP
Tr Max. (s)	300n-
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140#
@VCE (V)	4.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	364533

Back