TIP35B

SKU: TIP35B

TIP35B Transistor Silicon NPN CASE: TO218 MAKE: NTE Electronics

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Datasheet

TIP35B Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	NTE Electronics
Vbr CBO	120
Vbr CEO	80
Max. PD (W)	125
t(f) Max. (S)	900n-+
Max. hFE	75
Min hFE	15
Ic Max. (A)	25
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Tr Max. (s)	1.2u-
Derate Above 25°C	28m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	25 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	85245

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