TIP35E

SKU: TIP35E

TIP35E Transistor Silicon NPN CASE: TO218 MAKE: NTE Electronics

Datasheet

TIP35E Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	NTE Electronics
Vbr CBO	180
Vbr CEO	140
Max. PD (W)	125
t(f) Max. (S)	700n-
Max. hFE	50
Min hFE	8
Ic Max. (A)	25
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Tr Max. (s)	400n-
Derate Above 25°C	1.0
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	25 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	364539

Back