| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Manufacturer |
ST Microelectronics - STM |
| Case |
TO3P |
| Vbr CBO |
140 |
| Vbr CEO |
100 |
| Max. PD (W) |
3.5 |
| Derate (Amb) (W/°C) |
28m |
| t(f) Max. (S) |
800n-+ |
| Max. hFE |
75 |
| Min hFE |
15 |
| Ic Max. (A) |
25 |
| @Ic (test) (A) |
15 |
| Icbo Max. @Vcb Max. (A) |
1.0m |
| Polarity |
PNP |
| Tr Max. (s) |
1.1u- |
| Trans. Freq (Hz) Min. |
3.0M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
4.0 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
90 W |
| Maximum Collector-Base Voltage |Vcb| |
140 V |
| Maximum Collector-Emitter Voltage |Vce| |
100 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
25 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
16810 |