TIP36D

SKU: TIP36D

TIP36D Transistor Silicon PNP CASE: TO218 MAKE: NTE Electronics

Datasheet

TIP36D Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO218
Manufacturer	NTE Electronics
Vbr CBO	160
Vbr CEO	120
Max. PD (W)	125
Derate (Amb) (W/°C)	1.0
t(f) Max. (S)	800n-
Min hFE	25
Ic Max. (A)	25
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Tr Max. (s)	1.1u-
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140#
@VCE (V)	4.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	25 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	364543

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