| Type | Transistor Silicon NPN | |
| Case | TO211MA | |
| Manufacturer | Texas Instruments | |
| Vbr CBO | 130 | |
| Vbr CEO | 120 | |
| Max. PD (W) | 3.5 | |
| Max. hFE | 200 | |
| Min hFE | 40 | |
| Ic Max. (A) | 12 | |
| @Ic (test) (A) | 6.0 | |
| Icbo Max. @Vcb Max. (A) | 5.0m | |
| Polarity | NPN | |
| Derate Above 25°C | 800m | |
| Trans. Freq (Hz) Min. | 70M | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 4.0 | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 80 W | |
| Maximum Collector-Emitter Voltage |Vce| | 120 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 12 A | |
| Max. Operating Junction Temperature (Tj) | 200 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
| SKU | 583530 | |