| Type | Transistor Silicon NPN | |
| Case | TO3P | |
| Manufacturer | Texas Instruments | |
| Vbr CEO | 600 | |
| Max. PD (W) | 40 | |
| t(f) Max. (S) | 700n | |
| Min hFE | 8.0- | |
| Ic Max. (A) | 1.5 | |
| @Ic (test) (A) | 1.0 | |
| Polarity | NPN | |
| R(sat) (Û) | 5.0 | |
| Derate Above 25°C | 533m | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 10 | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 40 W | |
| Maximum Collector-Base Voltage |Vcb| | 1400 V | |
| Maximum Collector-Emitter Voltage |Vce| | 600 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| SKU | 583206 | |