| Type | Transistor Silicon PNP | |
| Case | TO237 | |
| Manufacturer | National Semiconductor - NSC | |
| Vbr CEO | 60 | |
| Max. PD (W) | 2.0 | |
| Derate (Amb) (W/°C) | 6.8m | |
| Max. hFE | 150 | |
| Min hFE | 30 | |
| Ic Max. (A) | 1.0 | |
| @Ic (test) (A) | 250m | |
| Icbo Max. @Vcb Max. (A) | 100u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 3.0M | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 1.0 | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector-Base Voltage |Vcb| | 60 V | |
| Maximum Collector-Emitter Voltage |Vce| | 60 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 100 pF | |
| Forward Current Transfer Ratio (hFE), MIN | 30 | |
| SKU | 555509 | |