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TN835
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TN835

SKU: TN835
TN835 Transistor Silicon NPN CASE: TO226 MAKE: Intel
Product specifications
Type Transistor Silicon NPN
Case TO226
Manufacturer Intel
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 3 V
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 1442017
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