The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
TP2907R
View detailed images (4)

TP2907R

SKU: TP2907R
TP2907R Transistor Silicon PNP CASE: TO226 MAKE: Generic
Product specifications
Equivalent TP2907
Type Transistor Silicon PNP
Case TO226
Manufacturer Generic
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 400m
C(ob) (F) 8.0p
t(on) Delay (S) 20n
t(f) Max. (S) 30n
hfe 100
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 20n
Polarity PNP
Tr Max. (s) 15n
t(stor) Max. (S) 100n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 1442051
Back