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TP3638

TP3638

SKU: TP3638
TP3638 Transistor Silicon PNP CASE: TO226 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO226
Manufacturer Generic
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 500m
C(ob) (F) 20p
hfe 20
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 35n
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.625 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 388647
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