TP4355

TP4355

SKU: TP4355
TP4355 Transistor Silicon PNP CASE: TO226 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO226
Manufacturer Generic
Vbr CBO 60
Vbr CEO 60
C(ob) (F) 3.0p
hfe 100
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 1248627
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